BLF861A Просмотр технического описания (PDF) - Philips Electronics
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BLF861A Datasheet PDF : 16 Pages
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Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF861A
16
handbook, halfpage
Gp
Gp
(dB)
12
ηD
8
MLD511
80
ηD
(%)
60
40
4
20
400
500
600
700
800
900
f (MHz)
Th = 25 °C; VCE = 32 V; IDQ = 1 A; PAL BG signal (TV);
sync compression: input 33%, output 27%;
measured in broadband test circuit.
Fig.10 Power gain and drain efficiency as functions
of frequency; typical values.
250
handbook, halfpage
Po sync
(W)
200
MLD512
150
100
50
0
400
500
600
700
800
900
f (MHz)
Th = 25 °C; VCE = 32 V; IDQ = 1 A; PAL BG signal (TV);
sync compression: input 33%, output 27%;
measured in broadband test circuit.
Fig.11 Peak envelope sync power as a function of
frequency; typical values.
16
handbook, halfpage
Gp
(dB)
12
8
MLD513
80
Gp
ηD
(%)
60
ηD
40
4
20
400
500
600
700
800
900
f (MHz)
Th = 25 °C; VDS = 32 V; IDQ = 1 A; CW, class-AB operation;
PL = 150 W; measured in broadband test circuit.
Fig.12 Power gain and drain efficiency as functions
of frequency; typical values.
2001 Feb 09
10
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