BLF522 Просмотр технического описания (PDF) - Philips Electronics
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BLF522 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF power MOS transistor
Product specification
BLF522
10
handbook, halfpage
Zi
(Ω)
0
ri
−20
xi
−40
MRA250
−60
−80
100
200
300
400
500
f (MHz)
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
PL = 5 W.
Fig.13 Input impedance as a function of frequency
(series components), typical values.
20
handbook, halfpage
ZL
(Ω)
15
RL
10
5
XL
MRA251
0
100
200
300
400
500
f (MHz)
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
PL = 5 W.
Fig.14 Load impedance as a function of frequency
(series components), typical values.
handbook, halfpage
Zi
ZL MBA379
Fig.15 Definition of MOS impedance.
September 1992
30
handbooGk, Phalfpage
(dB)
25
MRA248
20
15
10
5
0
100
200
300
400
500
f (MHz)
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
PL = 5 W.
Fig.16 Power gain as a function of frequency,
typical values.
10
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