BLF248 Просмотр технического описания (PDF) - Philips Electronics
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BLF248 Datasheet PDF : 13 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
APPLICATION INFORMATION FOR CLASS-AB OPERATION
Th = 25 °C; Rth mb-h = 0.15 K/W, unless otherwise specified.
RF performance in a linear amplifier in a common source class-AB circuit.
RGS = 536 Ω per section; optimum load impedance per section = 0.79 − j0.11 Ω.
MODE OF OPERATION
f
VDS
(MHz)
(V)
PL
(W)
class-AB
225
28
300
175
28
300
Ruggedness in class-AB operation
The BLF248 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under the
following conditions:
VDS = 28 V; f = 225 MHz at rated output power.
Product specification
BLF248
GP
(dB)
> 10
typ. 11.5
typ. 13
ηD
(%)
> 55
typ. 65
typ. 67
20
handbook, halfpage
Gp
(dB)
15
10
MGP209
80
ηD
Th = 25 °C
ηD
(%)
70 °C 60
Gp
25 °C
70 °C 40
5
20
0
0
0
100
200
300
400
PL (W)
Class-AB operation; VDS = 28 V; IDQ = 2 × 250 mA;
RGS = 536 Ω (per section); ZL = 0.79 − j0.11 Ω (per
section); f = 225 MHz.
Fig.9 Power gain and efficiency as functions of
load power, typical values.
400
handbook, halfpage
PL
(W)
300
200
Th = 25 °C
70 °C
MGP210
100
0
0
10
20
30
40
PIN (W)
Class-AB operation; VDS = 28 V; IDQ = 2 × 250 mA;
RGS = 536 Ω (per section); ZL = 0.79 − j0.11 Ω (per
section); f = 225 MHz.
Fig.10 Load power as a function of input power,
typical values.
September 1992
6
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