BLF248 Просмотр технического описания (PDF) - Philips Electronics
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BLF248 Datasheet PDF : 13 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product specification
BLF248
CHARACTERISTICS (per section)
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS
IDSS
IGSS
VGS(th)
∆VGS
gfs
gfs1/gfs2
RDS(on)
IDSX
Cis
Cos
Crs
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference
of both transistor sections
forward transconductance
forward transconductance ratio
of both transistor sections
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
VGS = 0; ID = 100 mA
VGS = 0; VDS = 28 V
±VGS = 20 V; VDS = 0
ID = 100 mA; VDS = 10 V
ID = 100 mA; VDS = 10 V
ID = 8 A; VDS = 10 V
ID = 8 A; VDS = 10 V
ID = 8 A; VGS = 10 V
VGS = 10 V; VDS = 10 V
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
MIN. TYP. MAX. UNIT
65 −
−
−
−
−
2
−
−
−
−
V
5
mA
1
µA
4.5 V
100 mV
5
7.5 −
S
0.9 −
1.1
−
0.1 0.15 Ω
−
37 −
A
−
500 −
pF
−
360 −
pF
−
46 −
pF
0
handbook, halfpage
T.C.
(mV/K)
−1
MGP204
−2
−3
−4
−5
10−1
VDS = 10 V.
1
10
ID (A)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
60
handbook, halfpage
ID
(A)
40
MGP205
20
0
0
5
10
15
20
VGS (V)
VDS = 10 V; Tj = 25 °C.
Fig.5 Drain current as a function of gate-source
voltage, typical values per section.
September 1992
4
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