BLF248 Просмотр технического описания (PDF) - Philips Electronics
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BLF248 Datasheet PDF : 13 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product specification
BLF248
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
SYMBOL
VDS
±VGS
ID
Ptot
PARAMETER
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
Tstg
storage temperature
CONDITIONS
MIN.
−
−
−
up to Tmb = 25 °C total device; −
both sections equally loaded
−65
MAX. UNIT
65
V
20
V
25
A
500 W
150 °C
THERMAL RESISTANCE
SYMBOL
Rth j-mb
Rth mb-h
PARAMETER
thermal resistance from
junction to mounting base
thermal resistance from
mounting base to heatsink
CONDITIONS
total device; both sections
equally loaded.
total device; both sections
equally loaded.
THERMAL RESISTANCE
0.35 K/W
0.15 K/W
handbook1, h0a2lfpage
ID
(A)
(1)
10
MRA933
(2)
1
1
10
102
VDS (V)
(1) Current is this area may be limited by RDS(on).
(2) Tmb = 25 °C.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
600
handbook, halfpage
Ptot
(W)
(2)
400
(1)
200
MGP203
0
0
50
100
150
Th (°C)
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
Fig.3 Power/temperature derating curves.
September 1992
3
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