BLF248 Просмотр технического описания (PDF) - Philips Electronics
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BLF248 Datasheet PDF : 13 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product specification
BLF248
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
excellent reliability.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for large signal
amplifier applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead SOT262 A1 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PIN CONFIGURATION
halfpage
1
2
5
3
Top view
5
4
MSB008
d2
g2
s
g1
d1
MBB157
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
PINNING - SOT262 A1
PIN
DESCRIPTION
1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
class-AB
225
28
300
175
28
300
GP
(dB)
> 10
typ. 13
ηD
(%)
> 55
typ. 67
September 1992
2
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