BFR93AT Просмотр технического описания (PDF) - Infineon Technologies

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производитель

BFR93AT

NPN Silicon RF Transistor

Infineon Technologies 

NPN Silicon RF Transistor

Preliminary data

For low distortion broadband amplifiers and

oscillators up to 2 GHz at collector currents from

5 mA to 30 mA

BFR93AT

3

2

1 VPS05996

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFR93AT

Marking

R2s

Pin Configuration

1=B

2=E

3=C

Package

SC75

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

TS
85°C 1)

Junction temperature

Ambient temperature

Storage temperature

Symbol

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

Value

12

20

20

2

50

6

300

150

-65 ... 150

-65 ... 150

Unit

V

mA

mW

°C

Thermal Resistance

Junction - soldering point2)

RthJS

215

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

1

Aug-09-2001

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