BFR92AW-GS08 Просмотр технического описания (PDF) - Vishay Semiconductors
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BFR92AW-GS08 Datasheet PDF : 10 Pages
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BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Tamb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
VCBO
20
V
VCEO
15
V
VEBO
2
V
IC
30
mA
Ptot
200
mW
Tj
150
°C
Tstg
- 65 to + 150
°C
Maximum Thermal Resistance
Parameter
Junction ambient
Test condition
1)
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Symbol
RthJA
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current VCE = 20 V, VBE = 0
Collector-base cut-off current VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 2 V, IC = 0
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
DC forward current transfer ratio VCE = 10 V, IC = 14 mA
Symbol
Min
ICES
ICBO
IEBO
V(BR)CEO
15
hFE
65
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Transition frequency
VCE = 10 V, IC = 14 mA,
fT
f = 500 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
Collector-emitter capacitance VCE = 10 V, f = 1 MHz
Cce
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
Noise figure
VCE = 10 V, IC = 2 mA,
F
ZS = 50 Ω, f = 800 MHz
Power gain
VCE = 10 V, ZS = 50 Ω,
Gpe
ZL = ZLopt, IC = 14 mA,
f = 800 MHz
Linear output voltage - two tone
intermodulation test
VCE = 10 V, IC = 14 mA,
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MHz, ZS = ZL = 50 Ω
V1 = V2
Third order intercept point
VCE = 10 V, IC = 14 mA,
IP3
f = 800 MHz
Value
450
Typ.
100
Typ.
6
0.3
0.15
0.65
1.8
16
120
24
Unit
K/W
Max
Unit
100
μA
100
nA
10
μA
V
150
Max
Unit
GHz
pF
pF
pF
dB
dB
mV
dBm
www.vishay.com
2
Document Number 85033
Rev. 1.4, 29-Apr-05
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