Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505W; BFG505W/X;
BFG505W/XR
4
handbook, halfpage
F
(dB)
3
MLC038
2 f = 2000 MHz
1000 MHz
900 MHz
1
500 MHz
0
10 1
1
IC (mA)
10
VCE = 6 V.
Fig.11 Minimum noise figure as a function of
collector current; typical values.
5
handbook, halfpage
Fmin
(dB)
4
3
MRA650
20
f = 900 MHz Gass
(dB)
15
1000 MHz
Gass
2000 MHz
10
2
2000 MHz
5
1000 MHz
Fmin
900 MHz
1
500 MHz
0
0
10−1
−5
1
10
IC (mA)
VCE = 6 V.
Fig.12 Associated available gain as a function of
collector current; typical values.
4
handbook, halfpage
F
(dB)
3
MLC039
2
I C = 5 mA
1 1.25 mA
0
10 2
10 3
10 4
f (MHz)
VCE = 6 V.
Fig.13 Minimum noise figure as a function of
frequency; typical values.
2000 Oct 30
handboFomk, ihn5alfpageIC = 1.25 mA
(dB)
4
5 mA
Gass
MRA651
20
Gass
(dB)
15
3
10
2
5 mA
1
1.25 mA
Fmin
0
102
103
f (MHz)
5
0
−5
104
VCE = 6 V.
Fig.14 Associated available gain as a function of
frequency; typical values.
7