Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505W; BFG505W/X;
BFG505W/XR
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
RF front end applications in the GHz
range, such as analog and digital
cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT,
etc.), radar detectors, pagers,
satellite television tuners (SATV).
DESCRIPTION
NPN silicon planar epitaxial
transistors in 4-pin dual-emitter
SOT343N and SOT343R plastic
packages.
MARKING
TYPE NUMBER
BFG505W
BFG505W/X
BFG505W/XR
CODE
N0
N1
P0
PINNING
PIN
DESCRIPTION
BFG505W (see Fig.1)
1 collector
2 base
3 emitter
4 emitter
BFG505W/X (see Fig.1)
1 collector
2 emitter
3 base
4 emitter
BFG505W/XR (see Fig.2)
1 collector
2 emitter
3 base
4 emitter
page
4
3
1
Top view
2
MBK523
Fig.1 SOT343N.
alfpage
3
4
2
Top view
1
MSB842
Fig.2 SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCES
IC
Ptot
hFE
Cre
fT
GUM
|s21|2
F
collector-base voltage open emitter
collector-emitter voltage RBE = 0
collector current (DC)
total power dissipation Ts ≤ 85 °C
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
noise figure
IC = 5 mA; VCE = 6 V
IC = 0; VCB = 6 V; f = 1 MHz
IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C
IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C
IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C
IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C
Γs = Γopt; IC = 1.25 mA; VCE = 6 V; f = 2 GHz
MIN. TYP. MAX. UNIT
−
−
20 V
−
−
15 V
−
−
18 mA
−
−
500 mW
60 120 250
−
0.2 −
pF
−
9
−
GHz
−
19 −
dB
12 −
dB
15 16 −
dB
−
1.9 −
dB
2000 Oct 30
2