BFG92A Просмотр технического описания (PDF) - NXP Semiconductors.
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BFG92A Datasheet PDF : 13 Pages
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NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFG92A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
CONDITIONS
open emitter
open base
open collector
Ts ≤ 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2
25
400
150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
VALUE
290
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector leakage current
hFE
DC current gain
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power
gain; note 1
F
noise figure
CONDITIONS
MIN.
IE = 0; VCB = 10 V
−
IC = 15 mA; VCE = 10 V
65
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
IC = ic = 0; VEB = 10 V; f = 1 MHz
−
IC = ic = 0; VCB = 10 V; f = 1 MHz
−
IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5
IC = 15 mA; VCE = 10 V;
−
Tamb = 25 °C; f = 1 GHz
IC = 15 mA; VCE = 10 V;
−
Tamb = 25 °C; f = 2 GHz
Γs = Γopt; IC = 5 mA; VCE = 10 V;
−
Tamb = 25 °C; f = 1 GHz
Γs = Γopt; IC = 5 mA; VCE = 10 V;
−
Tamb = 25 °C; f = 2 GHz
TYP.
−
90
0.6
0.9
0.35
5
16
11
2
3
MAX. UNIT
50
nA
135
−
pF
−
pF
−
pF
−
GHz
−
dB
−
dB
−
dB
−
dB
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM
=
10
log --(--1-----–------S----1---1----S2---)-2---1(---1-2----–------S----2--2-----2---)-
dB.
Rev. 06 - 12 March 2008
3 of 13
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