BFN22 Просмотр технического описания (PDF) - Diotec Semiconductor Germany

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BFN22

High Voltage Transistors

Diotec Semiconductor Germany  

High Voltage Transistors

Characteristics (Tj = 25/C)

Base saturation voltage – Basis-Sättigungsspannung 1)

IC = 10 mA, IB = 1 mA

VBEsat

DC current gain – Kollektor-Basis-Stromverhältnis 1)

VCE = 20 V, IC = 25 mA

hFE

Gain-Bandwidth Product – Transitfrequenz

VCE = 10 V, IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 30 V, IE = ie = 0, f = 1 MHz

CCB0

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BFN 22

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

–

–

1V

50

–

–

–

100 MHz

–

–

0.8 pF

–

RthA

420 K/W 2)

BFN 23

Marking - Stempelung

BFN 22 = HB

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

7

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