BFP520F Просмотр технического описания (PDF) - Infineon Technologies

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BFP520F

Low profile high gain silicon NPN RF bipolar transistor

Infineon Technologies 

BFP520F

Low profile high gain silicon NPN RF bipolar transistor

Product description

The BFP520F is a low noise device based on a grounded emitter (SIEGET™) that is part of

Infineon’s established fifth generation RF bipolar transistor family. Its transition

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noise make the device suitable

without compromising on ease

for applications

of use.

Feature list

• Minimum noise figure NFmin = 0.95 dB at 1.8 GHz, 2 V, 2 mA

• High gain Gms = 22.5 dB at 1.8 GHz, 2 V, 20 mA

• OIP3 = 23.5 dBm at 1.8 GHz, 2 V, 20 mA

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Potential applications

• Radio-frequency oscillators such as local oscillator in LNB

• Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio

• LNAs for wireless communications such as cordless phones

Device information

Table 1

Part information

Product name / Ordering code

BFP520F / BFP520FH6327XTSA1

Package

TSFP-4-1

Pin configuration

Marking

1 = B 2 = E 3 = C 4 = E APs

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Pieces / Reel

3000

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

Revision 2.0

2019-01-25

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