BFP460 Просмотр технического описания (PDF) - Infineon Technologies
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BFP460 Datasheet PDF : 15 Pages
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BFP460
Surface mount wideband silicon NPN RF bipolar transistor
Electrical characteristics
3
Electrical characteristics
3.1
DC characteristics
Table 4
Parameter
DC characteristics at TA = 25 °C
Symbol
Collector emitter breakdown voltage
Collector emitter leakage current
V(BR)CEO
ICES
Collector base leakage current
ICBO
Emitter base leakage current
IEBO
DC current gain
hFE
Values
Unit Note or test condition
Min. Typ. Max.
4.5 5.8 –
V IC = 1 mA, IB = 0,
open base
–
–
1000 2) nA VCE = 15 V, VBE = 0,
1
30 2)
VCE = 2 V, VBE = 0,
2
40 2)
TVCAE==855 V°C, V3B)E = 0,
E-B short circuited
1
30 2)
–
30 2)
VCB = 2 V, IE = 0,
VCB = 5 V, IE = 0,
open emitter
1
500 2)
VEB = 0.5 V, IC = 0,
open collector
90 120 160
VCE = 3 V, IC = 20 mA,
pulse measured
3.2
General AC characteristics
Table 5
General AC characteristics at TA = 25 °C
Parameter
Symbol
Values
Unit
Min. Typ. Max.
Transition frequency
fT
16 22 –
GHz
Collector base capacitance
CCB
–
0.32 0.45 pF
Collector emitter capacitance
CCE
0.28 –
Emitter base capacitance
CEB
0.55
Note or test condition
VCE = 3 V, IC = 30 mA,
f = 1 GHz
VCB = 3 V, VBE = 0,
f = 1 MHz,
emitter grounded
VCE = 3 V, VBE = 0,
f = 1 MHz,
base grounded
VEB = 0.5 V, VCB = 0,
f = 1 MHz,
collector grounded
2 Maximum values not limited by the device but by the short cycle time of the 100% test.
3 Verified by random sampling
Datasheet
5
Revision 2.0
2019-01-25
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