BFP460 Просмотр технического описания (PDF) - Infineon Technologies

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BFP460

Surface mount wideband silicon NPN RF bipolar transistor

Infineon Technologies 

BFP460

Surface mount wideband silicon NPN RF bipolar transistor

Absolute maximum ratings

1

Absolute maximum ratings

Table 2

Absolute maximum ratings at TA = 25 °C (unless otherwise specified)

Parameter

Symbol

Values

Unit Note or test condition

Min.

Max.

Collector emitter voltage

Collector emitter voltage

Collector base voltage

Emitter base voltage

Base current

Collector current

Total power dissipation 1)

Junction temperature

Ambient temperature

Storage temperature

VCEO

–

4.5

V

Open base

4.2

TA = -55 °C, open base

VCES

15

E-B short circuited

VCBO

15

Open emitter

VEBO

1.5

Open collector

IB

7

mA –

IC

70

Ptot

230

mW TS ≤ 92°C

TJ

150

°C –

TA

-55

TStg

Attention:

Stresses above the max. values listed here may cause permanent damage to the device.

Exposure to absolute maximum rating conditions for extended periods may affect device

reliability. Exceeding only one of these values may cause irreversible damage to the integrated

circuit.

1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.

Datasheet

3

Revision 2.0

2019-01-25

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