BFQ76 Просмотр технического описания (PDF) - Siemens AG

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производитель

BFQ76

PNP Silicon RF Transistor

Siemens AG 

BFQ 76

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-base cutoff current

VCB = 10 V, IE = 0

Emitter-base cutoff current

VEB = 2 V, IC = 0

DC current gain

IC = 14 mA, VCE = 10 V

AC Characteristics

Transition frequency

IC = 14 mA, VCE = 10 V, f = 500 MHz

Collector-base capacitance

VCB = 10 V, VBE = vbe = 0, f = 1 MHz

Input capacitance

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

Output capacitance

VCE = 10 V, VBE = vbe = 0, f = 1 MHz

Noise figure

IC = 5 mA, VCE = 6 V, f = 10 MHz, ZS = 75 Ω

IC = 4 mA, VCE = 10 V, f = 800 MHz, ZS = ZSopt

Power gain

IC = 14 mA, VCE = 10 V, f = 800 MHz,

ZS = ZSopt, ZL = ZLopt

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 15

–

–

V

ICB0

–

–

50 nA

IEB0

–

–

10

µA

hFE

20

50

–

–

fT

–

Ccb

–

Cibo

–

Cobs

–

F

–

–

Gpe

–

5

–

0.55 –

1.2 –

0.9 –

1.8 –

2.5 –

17 –

GHz

pF

dB

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