BFQ19S Просмотр технического описания (PDF) - Siemens AG
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BFQ19S Datasheet PDF : 4 Pages
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NPN Silicon RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5GHz
at collector currents from 10 mA to 70 mA
• CECC-type available: CECC 50 002/259
BFQ 19S
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
BFQ 19S
FGs
Q62702-F1088
1=B 2=C 3=E
Package
SOT-89
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 85 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Values
15
20
3
75
12
1
150
- 65 ... + 150
- 65 ... + 150
Unit
V
mA
W
°C
≤ 65
K/W
Semiconductor Group
1
Dec-16-1996
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