BFQ18A Просмотр технического описания (PDF) - Philips Electronics
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BFQ18A Datasheet PDF : 6 Pages
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Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFQ18A
handbook, halfpage
5 µH
200 Ω
10 kΩ L1
5 µH
10 nF
1.5 nF
VBB
VCC
2.2 nF
10 nF 4.7 nF
2.2 nF
DUT
0.68 pF
12 Ω
0.68
pF
RL
MBB829
f = 40 − 860 MHz.
Fig.2 Intermodulation distortion MATV test circuit.
handboo1k,2h0alfpage
h FE
80
MBB361
40
0
0
40
80
120
160
I C (mA)
VCE = 10 V; Tj = 25 °C.
Fig.3 DC current gain as a function of collector
current.
8
handbook, halfpage
fT
(GHz)
6
MBB357
4
2
0
0
40
80
120
160
IC (mA)
VCE = 10 V; f = 500 MHz; Tj = 25 °C.
Fig.4 Transition frequency as a function of
collector current.
September 1995
4
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