BFQ166 Просмотр технического описания (PDF) - Philips Electronics
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BFQ166 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN video transistor
Product specification
BFQ166
FEATURES
•Low output capacitance
• High gain bandwidth
• Good thermal stability
• Gold metallization ensures
excellent reliability
• High current applicability
• Surface mounting.
APPLICATIONS
• Video amplifier cascode driver in
high-resolution colour graphics
monitors.
DESCRIPTION
NPN video transistor in a SOT223
plastic package.
PINNING
PIN
DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
page
4
1
Top view
2
3
MSB002 - 1
Fig.1 Simplified outline
(SOT223).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCER
IC
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
open emitter
RBE = 100 Ω
Ts ≤ 105 °C; note 1
IC = 300 mA; VCE = 5 V; see Fig.4
IC = 300 mA; VCE = 5 V; f = 100 MHz;
Tamb = 25 °C
Note
1. Ts is the temperature at the soldering point of the collector lead.
MIN.
−
−
−
−
50
1
TYP.
−
−
−
−
60
−
MAX. UNIT
20
V
19
V
500 mA
2
W
−
−
GHz
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VCER
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
RBE = 100 Ω
open collector
CONDITIONS
Ts ≤ 105 °C; note 1; see Fig.3
Note
1. Ts is the temperature at the soldering point of the collector lead.
MIN.
−
−
−
−
−
−
−65
−
MAX. UNIT
20
V
10
V
19
V
3
V
500 mA
2
W
+150 °C
175 °C
1997 Oct 02
2
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