BFQ162 Просмотр технического описания (PDF) - Philips Electronics
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BFQ162 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN video transistor
Product specification
BFQ162
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 115 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
VALUE
20
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)CBO
V(BR)CEO
V(BR)CER
V(BR)EBO
ICES
hFE
collector-base breakdown voltage
collector-emitter breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter cut-off current
DC current gain
fT
transition frequency
Ccb
collector-base capacitance
Cc
collector capacitance
CONDITIONS
IC = 5 mA; IE = 0
IC = 10 mA; IB = 0
IC = 10 mA; RBE = 100 Ω
IE = 1 mA; IC = 0
VBE = 0 V; VCE = 10 V
IC = 300 mA; VCE = 5 V;
Tamb = 25 °C; see Fig.4
IC = 100 mA; VCE = 5 V;
Tamb = 25 °C; see Fig.4
IC = 300 mA; VCE = 5 V;
f = 100 MHz; Tamb = 25 °C;
see Fig.6
IC = ic = 0; VCB = 5 V; f = 1 MHz;
Tamb = 25 °C; see Fig.5
IE = ie = 0; VCB = 5 V; f = 1 MHz
MIN. TYP. MAX. UNIT
20 −
−
V
10 −
−
V
19 −
−
V
3
−
−
V
−
−
100 µA
50 60 −
40 50 −
1
−
−
GHz
−
4.2 −
pF
−
5.8 −
pF
1997 Oct 02
3
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