BFQ161 Просмотр технического описания (PDF) - Philips Electronics
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BFQ161 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN video transistor
Product specification
BFQ161
FEATURES
• Low output capacitance
• High gain bandwidth
• High current applicability
• Good thermal stability
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• Pre-stage driver in high resolution
colour graphics monitors.
DESCRIPTION
NPN video transistor in a SOT54
(TO-92) plastic package.
PINNING
PIN
DESCRIPTION
1 base
2 collector
3 emitter
1
page
2
3
MSB033
Fig.1 Simplified outline
(SOT54; TO-92).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
VCBO
collector-base voltage
open emitter
−
VCER
collector-emitter voltage
RBE = 100 Ω
−
IC
collector current (DC)
−
Ptot
total power dissipation
Ts ≤ 75 °C; note 1
−
hFE
DC current gain
IC = 300 mA; VCE = 5 V
25
fT
transition frequency
IC = 300 mA; VCE = 5 V; Tamb = 25 °C
1
Tj
junction temperature
−
Note
1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.
MAX.
20
19
500
1
−
−
150
UNIT
V
V
mA
W
GHz
°C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VCER
VEBO
IC
Ptot
Tstg
Tj
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
CONDITIONS
open emitter
open base
RBE = 100 Ω
open collector
Ts ≤ 75 °C; notes 1 and 2; see Fig.3
MIN.
−
−
−
−
−
−
−65
−
Notes
1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.
2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2.
MAX.
20
10
19
3
500
1
+150
150
UNIT
V
V
V
V
mA
W
°C
°C
1997 Oct 02
2
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