BFG325XR Просмотр технического описания (PDF) - Philips Electronics

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BFG325XR

NPN 14 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

BFG325/XR

NPN 14 GHz wideband transistor

90°

135°

45°

3 GHz

0.5 0.4 0.3 0.2 0.1

180°

0 40 MHz

0°

− 135°

− 45°

− 90°

001aac153

VCE = 3 V; IC = 15 mA.

Fig 7. Common emitter reverse transmission coefficient (s12); typical values

90°

+1

135° +0.5

+ 0.2

0

180°

0.2

− 0.2

0.5

1

3 GHz

1.0

+2

45°

0.8

0.6

0.4

+5

0.2

2

5 10

0°

0

40 MHz

−5

−135° −0.5

−1

− 90°

−2

− 45°

1.0

001aac154

VCE = 3 V; IC = 15 mA; Zo = 50 Ω.

Fig 8. Common emitter output reflection coefficient (s22); typical values

9397 750 14247

Product data sheet

Rev. 01 — 2 February 2005

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

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