BFG25A Просмотр технического описания (PDF) - Philips Electronics
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BFG25A Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFG25A/X
handbook,3h0alfpage
gain
(dB)
20
10
GUM
MCD141
MSG
0
0
0.5
1.0
1.5
VCE = 1 V; f = 500 MHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
2.0
2.5
IC (mA)
Fig.6 Gain as a function of collector current;
typical values.
handbook,2h0alfpage
gain
(dB)
15
10
GUM
MSG
MCD142
5
0
0
0.5
1.0
1.5
VCE = 1 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
2.0
2.5
IC (mA)
Fig.7 Gain as a function of collector current;
typical values.
handbook,5h0alfpage
gain
(dB)
40
30
GUM
MCD143
20
MSG
10
0
10
10 2
10 3
10 4
f (MHz)
IC = 0.5 mA; VCE = 1 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
Fig.8 Gain as a function of frequency;
typical values.
1997 Oct 29
handbook,5h0alfpage
gain
(dB)
40
30
GUM
MCD144
20
MSG
10
0
10
10 2
10 3
10 4
f (MHz)
IC = 1 mA; VCE = 1 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
Fig.9 Gain as a function of frequency;
typical values.
5
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