BFG16 Просмотр технического описания (PDF) - Philips Electronics
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BFG16 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN 2 GHz wideband transistor
Product specification
BFG16A
hanPdtbootok1, .h2alfpage
(W)
1.0
0.8
0.6
0.4
0.2
0
0
50
MBG198
100
150
Ts
(
o
200
C)
Fig.2 Power derating curve.
160
handbook, halfpage
h FE
120
80
40
0
0
MBB365
100
I C (mA)
200
VCE = 10 V; Tj = 25 °C.
Fig.3 DC current gain as function of
collector current.
handbook, h5alfpage
C re
(pF)
4
3
2
1
0
0
4
MBB363
8
12
16
20
VCB (V)
2
handbofoTk, halfpage
(GHz)
1.6
1.2
0.8
0.4
0
0
40
MBB364
80
120
160
IC (mA)
IC = ic = 0; f = 1 MHz.
Fig.4 Feedback capacitance as function of
collector-base voltage.
1995 Sep 12
VCE = 10 V; f = 500 MHz; Tamb = 25 °C.
Fig.5 Transition frequency as a function of
collector current.
4
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