BFG10W Просмотр технического описания (PDF) - Philips Electronics
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BFG10W Datasheet PDF : 9 Pages
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Philips Semiconductors
UHF power transistor
Product specification
BFG10W/X
FEATURES
• High efficiency
• Small size discrete power amplifier
• 900 MHz and 1.9 GHz operating
areas
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• Common emitter class-AB
operation in hand-held radio
equipment up to 1.9 GHz.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a plastic, 4-pin
dual-emitter SOT343 package.
PINNING
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
fpage
4
3
1
Top view
2
MBK523
Marking code: T5.
Fig.1 SOT343.
QUICK REFERENCE DATA
RF performance at Tamb = 25 °C in a common-emitter test circuit.
MODE OF OPERATION
f
VCE
PL
Gp
ηc
(GHz)
(V)
(mW)
(dB)
(%)
Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms
1.9
3.6
200
≥5
≥50
Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms
0.9
6
650
≥10
≥50
0.9
6
360
≥12.5
≥50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
IC(AV)
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to Ts = 102 °C; note 1
MIN.
−
−
−
−
−
−
−65
−
MAX.
20
10
2.5
250
250
400
+150
175
UNIT
V
V
V
mA
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 102 °C; note 1;
Ptot = 400 mW
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
VALUE
180
UNIT
K/W
1995 Sep 22
2
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