BF554 Просмотр технического описания (PDF) - Siemens AG

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производитель

BF554

NPN Silicon RF Transistor

Siemens AG 

BF 554

Collector cutoff current ICB0 = f (TA)

VCB = 20 V

Transition frequency fT = f (IC)

VCE = 10 V, f = 100 MHz

Collector-base capacitance Ccb = f (VCB)

f = 1 MHz

Noise figure F = f (f)

IC = 1 mA, VCE = 10 V, RS = 60 Ω

Semiconductor Group

4

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