BF996SA Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

BF996SA

N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Vishay Semiconductors 

BF996S

Vishay Telefunken

Electrical DC Characteristics

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Type

Symbol Min Typ Max Unit

Drain - source

ID = 10 mA, –VG1S = –VG2S = 4 V

breakdown voltage

V(BR)DS

20

V

Gate 1 - source

±IG1S = 10 mA, VG2S = VDS = 0

breakdown voltage

±V(BR)G1SS 8

14 V

Gate 2 - source

±IG2S = 10 mA, VG1S = VDS = 0

breakdown voltage

±V(BR)G2SS 8

14 V

Gate 1 - source

leakage current

±VG1S = 5 V, VG2S = VDS = 0

±IG1SS

50 nA

Gate 2 - source

leakage current

±VG2S = 5 V, VG1S = VDS = 0

±IG2SS

50 nA

Drain current

Gate 1 - source

cut-off voltage

VDS = 15 V, VG1S = 0, VG2S = 4 V BF996S

IDSS

4

BF996SA IDSS

4

BF996SB IDSS

9.5

VDS = 15 V, VG2S = 4 V, ID = 20 mA

–VG1S(OFF)

18 mA

10.5 mA

18 mA

2.5 V

Gate 2 - source

cut-off voltage

VDS = 15 V, VG1S = 0, ID = 20 mA

–VG2S(OFF)

2.0 V

Electrical AC Characteristics

VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified

Parameter

Forward transadmittance

Gate 1 input capacitance

Gate 2 input capacitance

Feedback capacitance

Output capacitance

Power gain

AGC range

Noise figure

Test Conditions

VG1S = 0, VG2S = 4 V

GS = 2 mS, GL = 0.5 mS, f = 200 MHz

GS = 3.3 mS, GL = 1 mS, f = 800 MHz

VG2S = 4 to –2 V, f = 800 MHz

GS = 2 mS, GL = 0.5 mS, f = 200 MHz

GS = 3.3 mS, GL = 1 mS, f = 800 MHz

Symbol

y21s

Cissg1

Cissg2

Crss

Coss

Gps

Gps

DGps

F

F

Min Typ Max Unit

15 18.5

mS

2.2 2.6 pF

1.1

pF

25 35 fF

10.8 1.2 pF

25

dB

18

dB

40

dB

1.0

dB

1.8

dB

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2 (8)

Document Number 85010

Rev. 3, 20-Jan-99

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