BF904A Просмотр технического описания (PDF) - Philips Electronics
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BF904A Datasheet PDF : 16 Pages
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Philips Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF904A; BF904AR; BF904AWR
40
Y fs
(mS)
30
MLD268
20
10
0
50
0
50
100
150
Tj (oC)
Fig.5 Transfer admittance as a function of the
junction temperature; typical values.
hangdbaoinok, ha0lfpage
reduction
(dB)
10
MRA769
20
30
40
50
0
1
2
3
4
VAGC (V)
f = 50 MHz.
Fig.6 Typical gain reduction as a function of
the AGC voltage; see Fig.21.
120
handbook, halfpage
Vunw
(dB µV)
110
MRA771
20
ID
(mA)
15
MLD270
VG2 S = 4 V 3 V 2.5 V
2V
100
90
80
0
10
20
30
40
50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; fw = 50 MHz.
funw = 60 MHz; Tamb = 25 °C; RG1 = 120 kΩ.
Fig.7 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.21.
10
5
0
0
1.5 V
1V
0.4
0.8
1.2
1.6
2.0
VG1 S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.8 Transfer characteristics; typical values.
1999 May 14
5
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