BF904A Просмотр технического описания (PDF) - Philips Electronics
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BF904A Datasheet PDF : 16 Pages
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Philips Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF904A; BF904AR; BF904AWR
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
Note
1. Soldering point of the source lead.
CONDITIONS
note 1
VALUE
200
UNIT
K/W
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)G1-SS
V(BR)G2-SS
V(F)S-G1
V(F)S-G2
VG1-S(th)
VG2-S(th)
IDSX
PARAMETER
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
IG1-SS
IG2-SS
gate 1 cut-off current
gate 2 cut-off current
CONDITIONS
VG2-S = VDS = 0; IG1-S = 10 mA
VG1-S = VDS = 0; IG2-S = 10 mA
VG2-S = VDS = 0; IS-G1 = 10 mA
VG1-S = VDS = 0; IS-G2 = 10 mA
VG2-S = 4 V; VDS = 5 V; ID = 20 µA
VG1-S = VDS = 5 V; ID = 20 µA
VG2-S = 4 V; VDS = 5 V;
RG1 = 120 kΩ; note 1
VG2-S = VDS = 0; VG1-S = 5 V
VG1-S = VDS = 0; VG2-S = 5 V
Note
1. RG1 connects gate 1 to VGG = 5 V; see Fig.21.
MIN.
6
6
0.5
0.5
0.3
0.3
8
MAX. UNIT
15
V
15
V
1.5 V
1.5 V
1
V
1.2 V
13
mA
−
50
nA
−
50
nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 10 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
yfs
Cig1-s
Cig2-s
Cos
Crs
F
forward transfer admittance pulsed; Tj = 25 °C
input capacitance at gate 1 f = 1 MHz
22
25
−
2.2
input capacitance at gate 2 f = 1 MHz
1
1.5
drain-source capacitance f = 1 MHz
1
1.4
reverse transfer capacitance f = 1 MHz
−
25
noise figure
f = 200 MHz; GS = 2 mS; BS = BSopt −
1
f = 800 MHz; GS = GSopt; BS = BSopt −
2
MAX.
30
2.6
2
1.7
35
1.5
2.8
UNIT
mS
pF
pF
pF
fF
dB
dB
1999 May 14
4
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