BF485PN Просмотр технического описания (PDF) - Philips Electronics
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BF485PN Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN/PNP high voltage transistors
Product specification
BF485PN
1000
handbook, halfpage
VBE
(mV)
800
600
400
MLD393
(1)
(2)
(3)
200
0
10−1
1
TR1 (NPN); VCE = 10 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
10
102
IC (mA)
Fig.4 Base-emitter voltage as a function of
collector current; typical values.
1000
handbook, halfpage
VBEsat
(mV)
(1)
800
(2)
600
(3)
400
MLD394
200
10−1
1
TR1 (NPN); IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
10
102
IC (mA)
Fig.5 Base-emitter saturation voltage as a
function of collector current.
103
handbook, halfpage
VCEsat
(mV)
102
MLD395
(1)
(2)
(3)
300
handbook, halfpage
hFE
(1)
200
(2)
100
(3)
MLD396
1100−1
1
TR1 (NPN); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
IC (mA)
Fig.6 Collector-emitter saturation voltage as a
function of collector current: typical values.
0
−10−1
−1
TR2 (PNP); VCE = −10 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
IC (mA)
Fig.7 DC current gain as a function of collector
current: typical values.
2000 Aug 02
4
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