BF485PN Просмотр технического описания (PDF) - Philips Electronics

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BF485PN

NPN/PNP high voltage transistors

Philips Electronics 

Philips Semiconductors

NPN/PNP high voltage transistors

Product specification

BF485PN

FEATURES

• High voltage (max. 350 V)

• Low current (max. 200 mA)

• High power dissipation (600 mW)

• Two independently working transistors.

APPLICATIONS

• Complementary high-voltage configurations

• Hook switch in telephone applications.

DESCRIPTION

NPN/PNP transistors in a SOT457 (SC-74) plastic

package.

MARKING CODE

TYPE NUMBER

BF485PN

CODE

HS

PINNING

PIN

1 and 4

5 and 2

6 and 3

DESCRIPTION

emitter TR1; TR2

base TR1; TR2

collector TR1; TR2

handbook, halfpag6e

5

4

1

2

3

Top view

654

TR1

TR2

123

MAM439

Fig.1 Simplified outline (SOT457) and symbol

LIMITING VALUES

In accordance with Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

MIN. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

VCBO

VCEO

VEBO

IO

ICM

Ptot

Tstg

Tj

Tamb

collector-base voltage

collector-emitter voltage

emitter-base voltage

output current (DC)

peak collector current

total power dissipation

storage temperature

junction temperature

operating ambient temperature range

open emitter

open base

open collector

Tamb ≤ 25 °C; note 1

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

350 V

−

350 V

−

6

V

−

100 mA

−

200 mA

−

600 mW

−65 +150 °C

−

150 °C

−65 +150 °C

−

300 mW

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

2000 Aug 02

2

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