BF200 Просмотр технического описания (PDF) - Continental Device India Limited
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BF200 Datasheet PDF : 4 Pages
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
IS/ISO 9002
Lic# QSC/L- 000019.2
BF200
TO-72
Metal Can Package
BF200 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Base Voltage
VCBO
30
Collector Emitter Voltage
VCEO
20
Emitter Base Voltage
VEBO
3
Collector Current Continuous
IC
20
Power Dissipation @ Ta=25ºC
PD
150
Junction Temperature
Tj
17
StorageTemperature
Tstg
-65 to +175
UNIT
V
V
V
mA
mW
ºC
ºC
THERMAL RESISTANCE
Junction to Ambient In Free Air
Rth(j-a)
1
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut off Current
DC Current Gain
SYMBOL TEST CONDITION
BVCEO IC=1mA, IB=0
BVCBO IC=10µA, IE=0
BVEBO IE=10µA, IC=0
ICBO VCB=15V, IE=0
hFE IC=1mA,VCE=10V
VALUE
MIN TYP MAX
20
30
3
500
40
UNIT
V
V
V
nA
DYNAMIC CHARACTERISTICS
Transition Frequency
Common Emitter Feedback Capacitance
fT IC=3mA, VCE=10V
f=100MHz
Cre VCB=10V, f=10MHz
700
0.65
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
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