BF1218 Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
BF1218 Datasheet PDF : 23 Pages
| |||
NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
20
ID
(mA)
16
12
8
(4)
4
(5)
(6)
001aag356
(1)
(2)
(3)
0
0
1
2
3
4
5
VGG (V)
(1) ID(B); RG1 = 68 k.
(2) ID(B); RG1 = 86 k.
(3) ID(B); RG1 = 100 k.
(4) ID(A); RG1 = 100 k.
(5) ID(A); RG1 = 86 k.
(6) ID(A); RG1 = 68 k.
Fig 2. Drain currents of MOSFET A and B as a
function of VGG
8. Dynamic characteristics
G1A
G2
G1B
RG1
VGG
DA
S
DB
001aac205
VGG = 5 V: amplifier A is off; amplifier B is on.
VGG = 0 V: amplifier A is on; amplifier B is off.
Fig 3. Functional diagram
8.1 Dynamic characteristics for amplifier A
Table 8. Dynamic characteristics for amplifier A[1]
Common source; Tamb = 25 C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
yfs
Ciss(G1)
Ciss(G2)
Coss
Crss
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance
f = 100 MHz; Tj = 25 C
f = 100 MHz
f = 100 MHz
f = 100 MHz
f = 100 MHz
26 31
[2] -
2.1
[2] -
3.4
[2] -
0.8
[2] -
20
Gtr
transducer power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
32 36
f = 400 MHz; GS = 2 mS; GL = 1 mS
28 32
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
24 28
NF
noise figure
f = 11 MHz; GS = 20 mS; BS = 0 S
- 3.0
f = 400 MHz; YS = YS(opt)
- 0.9
f = 800 MHz; YS = YS(opt)
- 1.1
Max Unit
41 mS
2.6 pF
-
pF
-
pF
-
fF
40 dB
36 dB
33 dB
-
dB
1.5 dB
1.7 dB
BF1218_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
5 of 23
Share Link: 