BF1218 Просмотр технического описания (PDF) - NXP Semiconductors.

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BF1218

Dual N-channel dual gate MOSFET

NXP Semiconductors. 

BF1218

Dual N-channel dual gate MOSFET

Rev. 01 — 14 April 2010

Product data sheet

1. Product profile

CAUTION

1.1 General description

The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source

and gate2 leads and an integrated switch. The integrated switch is operated by the gate1

bias of amplifier B.

The source and substrate are interconnected. Internal bias circuits enable DC stabilization

and a very good cross modulation performance during Automatic Gain Control (AGC).

Integrated diodes between the gates and source protect against excessive input voltage

surges. The transistor has a SOT363 micro-miniature plastic package.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

 Two low noise gain controlled amplifiers in a single package. One with a fully

integrated bias and one with a partly integrated bias

 Internal switch to save external components

 Superior cross modulation performance during AGC

 High forward transfer admittance

 High forward transfer admittance to input capacitance ratio

1.3 Applications

 Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply

voltage

 digital and analog television tuners

 professional communication equipment

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