BF1208 Просмотр технического описания (PDF) - NXP Semiconductors.
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BF1208 Datasheet PDF : 23 Pages
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NXP Semiconductors
BF1208
Dual N-channel dual gate MOSFET
20
ID
(mA)
16
12
001aaa552
(1)
(2)
(3)
8
(4)
4
(6)
(5)
0
0
1
2
3
4
5
VGG (V)
(1) ID(B); RG1 = 120 k.
(2) ID(B); RG1 = 150 k.
(3) ID(B); RG1 = 180 k.
(4) ID(A); RG1 = 180 k.
(5) ID(A); RG1 = 150 k.
(6) ID(A); RG1 = 120 k.
Fig 2. Drain currents of MOSFET A and B as a
function of gate1 supply voltage
8. Dynamic characteristics
G1A
G2
G1B
RG1
VGG
DA
S
DB
001aac205
VGG = 5 V: amplifier A is off; amplifier B is on.
VGG = 0 V: amplifier A is on; amplifier B is off.
Fig 3. Functional diagram
8.1 Dynamic characteristics for amplifier A
Table 8. Dynamic characteristics for amplifier A[1]
Common source; Tamb = 25 C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
yfs
forward transfer admittance Tj = 25 C
26 31
Ciss(G1) input capacitance at gate1 f = 1 MHz
- 2.2
Ciss(G2)
Coss
input capacitance at gate2
output capacitance
f = 1 MHz
f = 1 MHz
- 3.0
- 0.9
Crss
reverse transfer capacitance f = 1 MHz
- 20
Gtr
power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
32 36
f = 400 MHz; GS = 2 mS; GL = 1 mS
28 32
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
23 27
NF
noise figure
f = 11 MHz; GS = 20 mS; BS = 0 S
- 3.0
f = 400 MHz; YS = YS(opt)
- 1.3
f = 800 MHz; YS = YS(opt)
- 1.4
Max Unit
41 mS
2.7 pF
-
pF
-
pF
-
fF
40 dB
36 dB
32 dB
-
dB
1.9 dB
2.1 dB
BF1208
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2011
© NXP B.V. 2011. All rights reserved.
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