BF1208 Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
BF1208 Datasheet PDF : 23 Pages
| |||
NXP Semiconductors
BF1208
Dual N-channel dual gate MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
7. Static characteristics
Conditions
Typ
Unit
225
K/W
Table 7. Static characteristics
Tj = 25 C; unless otherwise specified.
Symbol Parameter
Per MOSFET; unless otherwise specified
V(BR)DSS drain-source breakdown voltage
V(BR)G1-SS
V(BR)G2-SS
VF(S-G1)
VF(S-G2)
VG1-S(th)
VG2-S(th)
IDSX
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain-source current
IG1-S
gate1 cut-off current
IG2-S
gate2 cut-off current
Conditions
VG1-S = VG2-S = 0 V; ID = 10 A
amplifier A
amplifier B
VG2-S = VDS = 0 V; IG1-S = 10 mA
VG1-S = VDS = 0 V; IG2-S = 10 mA
VG2-S = VDS = 0 V; IS-G1 = 10 mA
VG1-S = VDS = 0 V; IS-G2 = 10 mA
VDS = 5 V; VG2-S = 4 V; ID = 100 A
VDS = 5 V; VG1-S = 5 V; ID = 100 A
VG2-S = 4 V; VDS(B) = 5 V; RG1 = 150 k
amplifier A; VDS(A) = 5 V
amplifier B; VDS(B) = 5 V
VG2-S = VDS(A) = 0 V
amplifier A; VG1-S(A) = 5 V; ID(B) = 0 A
amplifier B; VG1-S(B) = 5 V; VDS(B) = 0 V
VG2-S = 4 V; VG1-S(B) = 0 V;
VG1-S(A) = VDS(A) = VDS(B) = 0 V
[1] RG1 connects gate1 (B) to VGG = 0 V (see Figure 3).
[2] RG1 connects gate1 (B) to VGG = 5 V (see Figure 3).
Min Typ Max Unit
6-
6-
6-
6-
0.5 -
0.5 -
0.3 -
0.4 -
-V
-V
10 V
10 V
1.5 V
1.5 V
1.0 V
1.0 V
[1] 14 -
[2] 9
-
24 mA
17 mA
- - 50 nA
- - 50 nA
- - 20 nA
BF1208
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2011
© NXP B.V. 2011. All rights reserved.
4 of 23
Share Link: 