BF1208 Просмотр технического описания (PDF) - Philips Electronics

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производитель

BF1208

Dual N-channel dual gate MOSFET

Philips Electronics 

Philips Semiconductors

BF1208

Dual N-channel dual gate MOSFET

3. Ordering information

Table 3: Ordering information

Type number Package

Name Description

BF1208

-

plastic surface mounted package; 6 leads

4. Marking

Table 4: Marking codes

Type number

BF1208

Marking code

2L

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Per MOSFET

VDS

drain-source voltage (DC)

-

ID

drain current (DC)

-

IG1

gate1 current

-

IG2

gate2 current

-

Ptot

total power dissipation

Tsp ≤ 109 °C [1] -

Tstg

storage temperature

−65

Tj

junction temperature

-

[1] Tsp is the temperature at the soldering point of the source lead.

Max

6

30

±10

±10

180

+150

150

Version

SOT666

Unit

V

mA

mA

mA

mW

°C

°C

9397 750 14254

Product data sheet

250

Ptot

(mW)

200

150

100

50

0

0

50

100

Fig 1. Power derating curve

Rev. 01 — 16 March 2005

001aac193

150

200

Tsp (˚C)

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

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