BF1208 Просмотр технического описания (PDF) - Philips Electronics
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BF1208 Datasheet PDF : 22 Pages
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Philips Semiconductors
BF1208
Dual N-channel dual gate MOSFET
10
bos, gos
(mS)
1
10−1
001aac569
bos
gos
10−2
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 19 mA
Fig 16. Amplifier A: output admittance as a function of frequency; typical values
8.1.2 Scattering parameters for amplifier A
Table 9: Scattering parameters for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values.
f
(MHz)
s11
Magnitude
(ratio)
Angle
(deg)
s21
Magnitude
(ratio)
Angle
(deg)
s12
Magnitude
(ratio)
Angle
(deg)
s22
Magnitude
(ratio)
Angle
(deg)
50
0.991
−3.86 3.08
175.91 0.0009
77.41 0.992
−1.41
100 0.990
−7.73 3.03
171.76 0.0019
78.10 0.991
−2.81
200 0.986
−15.43 2.99
163.68 0.0037
78.39 0.990
−5.57
300 0.980
−22.98 2.94
155.54 0.0054
73.53 0.989
−8.34
400 0.970
−30.44 2.89
147.55 0.0070
68.74 0.986
−11.08
500 0.960
−37.60 2.82
139.76 0.0085
63.64 0.983
−13.78
600 0.948
−44.62 2.75
132.16 0.0098
59.62 0.980
−16.45
700 0.935
−51.44 2.67
124.70 0.0110
55.09 0.977
−19.10
800 0.921
−58.04 2.58
117.39 0.0120
50.79 0.973
−21.69
900 0.908
−64.41 2.50
110.20 0.0128
46.62 0.970
−24.28
1000 0.894
−70.49 2.40
103.31 0.0135
42.78 0.967
−26.87
8.1.3 Noise data for amplifier A
Table 10: Noise data for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values;
unless otherwise specified.
f (MHz)
NFmin (dB)
Γopt
ratio
(deg)
rn (Ω)
400
1.3
0.718
16.06
0.683
800
1.4
0.677
37.59
0.681
9397 750 14254
Product data sheet
Rev. 01 — 16 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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