BF1207 Просмотр технического описания (PDF) - Philips Electronics
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BF1207 Datasheet PDF : 22 Pages
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Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
Table 8: Dynamic characteristics for amplifier A
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 18 mA. [1]
Symbol Parameter
Conditions
yfs
Ciss(G1)
Ciss(G2)
Coss
Crss
Gtr
NF
Xmod
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance
power gain
noise figure
cross-modulation
Tj = 25 °C
f = 100 MHz
f = 1 MHz
f = 100 MHz
f = 100 MHz
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
f = 800 MHz; YS = YS(opt)
input level for k = 1 %; fw = 50 MHz;
funw = 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
[1] For the MOSFET not in use: VG1-S(B) = 0 V; VDS(B) = 0 V.
[2] Measured in Figure 29 test circuit.
Min Typ
25 30
- 2.2
- 3.5
- 0.9
- 20
Max Unit
40 mS
2.7 pF
-
pF
-
pF
-
fF
30 34
26 30
21 25
- 3.0
- 1.3
- 1.4
[2]
38 dB
34 dB
29 dB
-
dB
-
dB
-
dB
90 -
-
- 90 -
- 99 -
100 105 -
dBµV
dBµV
dBµV
dBµV
9397 750 14955
Product data sheet
Rev. 01 — 28 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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