BF1207 Просмотр технического описания (PDF) - Philips Electronics
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BF1207 Datasheet PDF : 22 Pages
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Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
Table 7: Static characteristics …continued
Tj = 25 °C.
Symbol Parameter
IG1-S
gate1 cut-off current
IG2-S
gate2 cut-off current
Conditions
VG2-S = VDS(A) = 0 V
amplifier A; VG1-S(A) = 5 V; VDS(B) = 0 V
amplifier B; VG1-S(A) = 0 V; ID(B) = 0 A
VG2-S = 4 V; VG1-S = VDS(A) = VDS(B) = 0 V;
[1] RG1 connects gate1 (A) to VGG = 5 V (see Figure 3).
[2] RG1 connects gate1 (B) to VGG = 0 V (see Figure 3).
Min Typ Max Unit
- - 50 nA
- - 50 nA
- - 20 nA
20
ID
(mA)
16
001aac742
(1)
(2)
12
(3)
8
(4)
4
(6)
(5)
0
0
1
2
3
4
5
VGG (V)
(1) ID(A); RG1 = 47 kΩ.
(2) ID(A); RG1 = 68 kΩ.
(3) ID(A); RG1 = 100 kΩ.
(4) ID(B); RG1 = 100 kΩ.
(5) ID(B); RG1 = 68 kΩ.
(6) ID(B); RG1 = 47 kΩ.
VDS(A) = VDS(B) = 5 V; VG2-S = 4 V; Tj = 25 °C.
Fig 2. Drain currents of MOSFET A and B as function
of VGG
G1B
G2
G1A
RG1
VGG
DB
S
DA
001aac881
VGG = 5 V: amplifier A is on; amplifier B is off.
VGG = 0 V: amplifier A is off; amplifier B is on.
Fig 3. Functional diagram
9397 750 14955
Product data sheet
Rev. 01 — 28 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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