BDX88C Просмотр технического описания (PDF) - Inchange Semiconductor
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BDX88C Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX88/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDX88
-45
BDX88A
-60
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
IC= -100mA; IB= 0
V
BDX88B
-80
BDX88C
-100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A; IB=B -24mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -12A; IB= -120mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -12A; IB= -120mA
VBE(on)
ICBO
Base-Emitter On Voltage
BDX88
Collector
Cutoff Current
BDX88A
BDX88B
BDX88C
BDX88
IC= -6A; VCE= -3V
VCB= -45V; IE= 0
VCB= -45V; IE= 0; TC= 150℃
VCB= -60V; IE= 0
VCB= -60V; IE= 0; TC= 150℃
VCB= -80V; IE= 0
VCB= -80V; IE= 0; TC= 150℃
VCB= -100V; IE= 0
VCB= -100V; IE= 0; TC= 150℃
VCE= -22V; IB=B 0
-2.0
V
-3.0
V
-4.0
V
-2.8
V
-0.5
-5.0
-0.5
-5.0
mA
-0.5
-5.0
-0.5
-5.0
ICEO
Collector
Cutoff Current
BDX88A VCE= -30V; IB=B 0
BDX88B VCE= -40V; IB=B 0
-1.0
mA
BDX88C VCE= -50V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-2.0
mA
hFE-1
DC Current Gain
IC= -5A; VCE= -3V
1000
hFE-2
DC Current Gain
IC= -6A; VCE= -3V
750
18000
hFE-3
DC Current Gain
IC= -12A; VCE= -3V
100
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