BDW84A Просмотр технического описания (PDF) - Inchange Semiconductor
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BDW84A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BDW84/84A/84B/84C/84D
DESCRIPTION
·With TO-3PN package
·Complement to type BDW83/83A/83B/83C/83D
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use in power linear and switching
applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25℃)
体 SYMBOL
PARAMETER
固I电NC半H导ANGE SEMICONDUCTOR BDW84
BDW84A
VCBO
Collector-base voltage BDW84B
BDW84C
BDW84D
BDW84
CONDITIONS
Open emitter
VALUE
-45
-60
-80
-100
-120
-45
UNIT
V
BDW84A
-60
VCEO
Collector-emitter voltage BDW84B Open base
-80
V
BDW84C
-100
BDW84D
-120
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-15
A
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=25℃
Ta=25℃
-0.5
A
150
W
3.5
150
℃
-65~150
℃
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