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Компоненты Описание
BDT64B Просмотр технического описания (PDF) - Comset Semiconductors
Номер в каталоге
Компоненты Описание
производитель
BDT64B
SILICON DARLINGTON POWER TRANSISTORS
Comset Semiconductors
BDT64B Datasheet PDF : 5 Pages
1
2
3
4
5
SEMICONDUCTORS
BDT64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
V
BE(on)
Base-Emitter Voltage
(*)
I
C
= -5 A, V
CE
= -4 V
V
ECF
C-E Diode Forward
Voltage
I
F
= -5 A
I
F
= -12 A
V
CE
= -4 V, I
C
= -1 A
h
FE
DC Current Gain (*) V
CE
= -4 V, I
C
= -5 A
V
CE
= -4 V, I
C
= -12 A
C
OB
Output Capacitance
I
E
= 0, V
CB
= -10 V
f
test
= 1MHz
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
Min Typ Max Unit
-
- -2.5 V
-
-2
V
-
-2
-
- 1500 -
1000 -
-
-
- 750 -
- 200 - pF
SWITCHING TIMES
Symbol
Ratings
Test Condition(s)
t
on
turn-on time
t
off
turn-off time
I
C
= -5 A , V
CC
= -30 V
I
B1
= -I
B2
= -20 mA
(*) Pulse Width
≈
300
µ
s, Duty Cycle
∠
2.0%
Min Typ Max Unit
- 0.5 2
- 2.5 5
µs
26/09/2012
COMSET SEMICONDUCTORS
4|5
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