BDT64 Просмотр технического описания (PDF) - Comset Semiconductors
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производитель
BDT64 Datasheet PDF : 5 Pages
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SEMICONDUCTORS
BDT64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VBE(on)
Base-Emitter Voltage
(*)
IC= -5 A, VCE= -4 V
VECF
C-E Diode Forward
Voltage
IF= -5 A
IF= -12 A
VCE= -4 V, IC= -1 A
hFE
DC Current Gain (*) VCE= -4 V, IC= -5 A
VCE= -4 V, IC= -12 A
COB
Output Capacitance
IE= 0, VCB = -10 V
ftest= 1MHz
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
Min Typ Max Unit
-
- -2.5 V
-
-2
V
-
-2
-
- 1500 -
1000 -
-
-
- 750 -
- 200 - pF
SWITCHING TIMES
Symbol
Ratings
Test Condition(s)
ton
turn-on time
toff
turn-off time
IC= -5 A , VCC= -30 V
IB1 = -IB2 = -20 mA
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
Min Typ Max Unit
- 0.5 2
- 2.5 5
µs
26/09/2012
COMSET SEMICONDUCTORS
4|5
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