BDT64C Просмотр технического описания (PDF) - Comset Semiconductors
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BDT64C Datasheet PDF : 5 Pages
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SEMICONDUCTORS
BDT64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
ICEO
IEBO
VCEO
VCE(SAT)
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff
Current
Collector-Emitter
Breakdown Voltage
Collector-Emitter
saturation Voltage
(*)
IE= 0,VCB = -VCBOmax
IE= 0,VCB= -1/2
VCBOmax
TJ= 150 °C
IE= 0, VCE= -1/2
VCEOmax
VEB= -5 V, IC= 0
IC= -30 mA, IB= 0
IC= -5 A, IB= -20 mA
IC= -10 A, IB= -100 mA
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
Min Typ Max Unit
-
- -0.4 mA
-
-
-2 mA
-
- 0.2 mA
-
-
-60 -
-80 -
-100 -
-120 -
-
-
-
-
-5 mA
-
-
-
V
-
-2
V
-3
26/09/2012
COMSET SEMICONDUCTORS
3|5
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