BDT63 Просмотр технического описания (PDF) - Comset Semiconductors
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BDT63 Datasheet PDF : 5 Pages
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SEMICONDUCTORS
BDT63-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
ICEO
IEBO
VCEO
VCE(SAT)
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff
Current
Collector-Emitter
Breakdown Voltage
Collector-Emitter
saturation Voltage (*)
IE= 0, VCB = VCBOmax
IE= 0, VCB =1/2
VCBOmax
TJ= 150 °C
IE= 0, VCE = 1/2
VCEOmax
VEB= 5 V, IC= 0
IC= 30 mA, IB= 0
IC= 3 A, IB= 12 mA
IC= 8 A, IB=80 mA
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
Min Typ Max Unit
-
- 0.2 mA
-
-
2 mA
-
- 0.5 mA
-
- 5.0 mA
60 -
80 -
100 -
120 -
-
-
-
V
-
-
-
2
V
-
- 2.5
26/09/2012
COMSET SEMICONDUCTORS
3|5
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