BD895A Просмотр технического описания (PDF) - Power Innovations Ltd
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BD895A Datasheet PDF : 6 Pages
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BD895A, BD897A, BD899A
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
IC = 100 mA IB = 0
(see Note 3)
BD895A
45
BD897A
60
BD899A
80
ICEO
Collector-emitter
cut-off current
VCE =
VCE =
VCE =
30 V
30 V
40 V
IB = 0
IB = 0
IB = 0
BD895A
0.5
BD897A
0.5
BD899A
0.5
VCB = 45 V
IE = 0
BD895A
0.2
VCB = 60 V
IE = 0
BD897A
0.2
ICBO
Collector cut-off
current
VCB = 80 V
VCB = 45 V
IE = 0
IE = 0
TC = 100°C
BD899A
BD895A
0.2
2
VCB = 60 V
IE = 0
TC = 100°C
BD897A
2
VCB = 80 V
IE = 0
TC = 100°C
BD899A
2
Emitter cut-off
IEBO current
VEB = 5 V
IC = 0
(see Notes 3 and 4)
2
Forward current
hFE
transfer ratio
VCE = 3 V
IC = 4 A
(see Notes 3 and 4)
750
Collector-emitter
VCE(sat) saturation voltage
IB = 16 mA IC = 4 A
(see Notes 3 and 4)
2.8
Base-emitter
VBE(on) voltage
VCE = 3 V
IC = 4 A
(see Notes 3 and 4)
2.5
Parallel diode
VEC forward voltage
IE = 8 A
IB = 0
3.5
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.79 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton
Turn-on time
toff
Turn-off time
IC = 3 A
VBE(off) = -3.5 V
IB(on) = 12 mA
RL = 10 Ω
IB(off) = -12 mA
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1
µs
5
µs
PRODUCT INFORMATION
2
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