BD684A Просмотр технического описания (PDF) - Comset Semiconductors
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BD684A Datasheet PDF : 3 Pages
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PNP BD684 – BD684A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICBO
Collector cut-off current
IE=0, VCB= -120 V
IE=0, VCB= -120V, Tj= 150°C
-
-
ICEO
Collector cut-off current
IB=0,VCE= -1/2VCEOMAX
-
IEBO
Emitter cut-offcurrent
IC=0, VEB=-5 V
-
VCE(SAT)
IC=-1.5 A
Collector-Emitter saturation IB=-30 mA
Voltage (*)
IC=-2 A, IB=-40 mA
BD683
BD683A
-
-
-
-
-0,2
-2
mA
- -0,5 mA
-
-5 mA
- -2,5
V
- -2,8
hFE
DC Current Gain (*)
VCE=-3 V, IC=-1.5 A
VCE=-3 V, IC=-2 A
BD683
BD683A
750
-
-
-
VBE
Base-Emitter Voltage (*)
VCE=-3 V, IC=-1.5 A BD683
VCE=-3 V, IC=-2 A BD683A
-
- -2,5 V
hfe
Small signal current gain VCE=-3 V, IC=-1.5 A, f= 1 MHz 10
-
-
-
fhfe
Ut-off frequency
VCE=-3 V, IC=-1.5 A
- 60 - kHz
VF
Diode forward voltage
IF=-1,5 A
- -1,5 -
V
I(SB)
Second-breakdown
collector current
VCE=-50 V, tP= 20ms, non rep.
without heatsink
-0,8
-
-
A
ton
Turn-on time
Icon= -1.5A, Ibon= -Iboff= -6mA
toff
Turn-off time
VCC=-30V
(*) Measured under pulse conditions :tP <300µs, δ <2%.
-
-
0,8
4,5
2
8
µs
23/10/2012
COMSET SEMICONDUCTORS
2|3
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