BD707(1999) Просмотр технического описания (PDF) - STMicroelectronics
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производитель
BD707 Datasheet PDF : 6 Pages
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BD707/708/709/711/712
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-case Thermal Resistance Junction-ambient
Max
Max
1.67
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
Pa ram et e r
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
for BD707/708
for BD709
for BD711/712
Tcase = 150 oC
for BD707/708
for BD709
for BD711/712
ICEO
Collector Cut-off
Current (IB = 0)
for BD707/708
for BD709
for BD711/712
IEBO Emitter Cut-off Current
(IC = 0)
VCEO(s us)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VEB = 5 V
IC = 100 mA
for BD707/708
for BD709
for BD711/712
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 4 A
IB = 0.4 A
VCEK ∗
V BE ∗
h F E∗
Knee Voltage
Base-Emitter Voltage
DC Current Gain
IC = 3 A
IC = 4 A
IC = 0.5 A
IC = 2 A
IC = 4 A
IC = 10 A
IB = **
VCE = 4 V
VCE = 2 V
VCE = 2 V
for BD707/708
for BD709
VCE = 4 V
VCE = 4 V
for BD707/708
for BD709
for BD711/712
fT
Transition frequency IC = 300 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
** Value for which IC = 3.3 A at VCE = 2V.
For PNP types voltage and current values are negative.
VCE = 3 V
Min. Typ.
60
80
100
40 120
30
30
15
5
10
8
8
3
Max.
100
100
100
1
1
1
100
100
100
1
1
0.4
1.5
400
150
Unit
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
MHz
2/6
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