BD635 Просмотр технического описания (PDF) - Inchange Semiconductor

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BD635

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BD635

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= 0.1mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 0.1A

VBE(on) Base-Emitter On Voltage

IC= 1A; VCE= 2V

ICES

Collector Cutoff Current

VCE= 60V; VBE= 0

hFE-1

DC Current Gain

IC= 25mA; VCE= 2V

hFE-2

DC Current Gain

IC= 1A; VCE= 2V

MIN MAX UNIT

60

V

60

V

5

V

0.6

V

1.3

V

0.2

mA

40

25

isc Website：www.iscsemi.cn

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